Intel's High-NA EUV Machines Already Processed 30,000 Wafers, More to Come with 14A Node - Related to (1-gamma), company's, gpu, 1γ, already

Intel's High-NA EUV Machines Already Processed 30,000 Wafers, More to Come with 14A Node

Intel has successfully deployed two advanced ASML High-NA Twinscan EXE:5000 EUV lithography systems at its D1 development facility near Hillsboro, Oregon, processing approximately 30,000 wafers in a single quarter. The High-NA EUV systems, each reportedly valued at $380 million , represent a substantial improvement over previous lithography tools, achieving resolution down to 8 nm with a single exposure compared to the [website] nm resolution of current Low-NA systems. Early operational data indicates these machines are approximately twice as reliable as previous EUV generations, addressing reliability challenges that previously hampered Intel's manufacturing progress. The ability to accomplish with a single exposure what previously required three exposures and approximately 40 processing steps has been reduced to just "single digit" processing [website] has historically been an early adopter of high-NA EUV lithography, a much more aggressive strategy than its competitors like TSMC, which manufactures its advanced silicon using low-NA EUV tools. The enterprise plans to utilize these systems for its upcoming 14A chip manufacturing process, though no specific mass production date has been revealed. While ASML classifies these Twinscan EXE:5000 systems as pre-production tools not designed for high-volume manufacturing, Intel's extensive wafer processing is more of a test bed. The early adoption provides Intel with valuable development opportunities across various High-NA EUV manufacturing aspects, including photomask glass, pellicles, and specialized chemicals that could establish future industry standards. Intel's current 18A node is utilizing Low-NA lithography tools, where Intel is only exploring High-NA with it for testing, before moving on to 14A high-volume manufacturing with High-NA EUV.

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(PR) Imagination's New DXTP GPU for Mobile and Laptop: 20% More Power Efficient

"Zelos is integrating the advanced, power-efficient compute of Imagination DXTP into our upcoming chip," says Cheng Chen, Technical Director at Zelos. "Imagination's GPUs combine the performance of ultra-parallel processing with the flexibility that comes from a highly programmable architecture, making them the ideal platform for accelerating our AI models."

"Imagination DXTP is a real example of many small steps achieving big gains and of the resourcefulness of Imagination's engineering teams," says James Chapman, Chief Product Officer, Imagination. "The set of performance and efficiency improvements inside DXTP will enable future smartphones to run the next wave of gaming and AI applications with even lower power consumption than before."

Today Imagination Technologies announces its latest GPU IP, Imagination DXTP, which sets a new standard for the efficient acceleration of graphics and compute workloads on smartphones and other power-constrained devices. Thanks to an array of micro-architectural improvements, DXTP delivers up to 20% improved power efficiency (FPS/W) on popular graphics workloads when compared to its DXT equivalent."The global smartphone market is experiencing a resurgence, propelled by cutting-edge AI features such as personal agents and enhanced photography," says Peter Richardson, Partner & VP at Counterpoint Research. "However, the success of this AI-driven revolution hinges on maintaining the high standards users expect: smooth interfaces, sleek designs, and all-day battery life. As the market matures, consumers are gravitating towards premium devices that seamlessly integrate these advanced AI capabilities without compromising on essential smartphone qualities."Offering up to 64 GPixel/s, 2 TFLOPS FP32 and 8 TOPS INT8 in an ultra-parallel compute engine running at 1 GHz, DXTP is available in two off-the-shelf configurations and has already been licensed for use in mobile and automotive. In addition to performance and efficiency optimizations, DXTP is highly flexible, featuring fully secure GPU multitasking (via Imagination's low-overhead, hardware-based virtualization technology) and the ability to run graphics and compute operations at the same time with minimal [website] is supported by Imagination's well-established software ecosystem and award-winning SDK and tools. It ships with highly optimized OpenCL compute libraries that boost GPU utilization for popular AI tasks, as well as reference kits for oneAPI and Tensor Graph that accelerate the porting of existing code onto Imagination-based hardware. Optimized LiteRT support for Imagination GPUs will enable high performance AI on Android. App developers have access to the Power VR developer tools for low-level performance analysis, debugging, trace capturing, as well as expert support through the Imagination developer [website] is the final product of Imagination's D-Series GPU family which includes the high-performance IMG DXD with DirectX FL11_0 for the desktop market and the innovative IMG DXS for the safety-critical automotive market.

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(PR) Micron Announces Shipment of 1γ (1-gamma) DRAM: Company's First EUV Memory Node

Enhanced performance—Micron 1γ-based DRAM provides improved performance that will support the scaling of compute across a variety of memory offerings from data centers to edge devices to meet the demands of future AI workload requirements.

Power savings—Micron's 1γ node, using next-generation high-K metal gate CMOS technology paired with design optimizations, enables greater than 20% lower power, which leads to improved thermal profiles.

Improved bit-density output—Micron's 1γ node, leveraging EUV lithography, design optimizations and process innovations, results in greater than 30% more bits-per-wafer output over the previous generation and the ability to scale memory supply efficiently.

Data center—1γ-based DDR5 memory solutions for the data center, which enable up to 15% faster performance, deliver increased energy efficiency and help enable continued server performance scaling allowing data centers to optimize within future rack-level power and thermal design.

Edge AI—1γ low-power DRAM solutions offer improved power savings and increased bandwidth, enhancing the user experience with Edge AI solutions.

AI PCs—1γ DDR5 SODIMMs increase performance and reduce power usage by 20%, extending battery life and improving the overall notebook user experience.

Mobile—1γ LPDDR5X will enable exceptional AI experiences at the edge and continues Micron's leadership in mobile technology.

Automotive—1γ-based LPDDR5X memory extends capacity, longevity and performance, while achieving speeds up to 9600 MT/s.

Micron Technology, Inc., today announced it is the first in the industry to ship samples of its 1γ (1-gamma), sixth-generation (10 nm-class) DRAM node-based DDR5 memory designed for next-generation CPUs to ecosystem partners and select customers. This 1γ DRAM milestone builds on Micron's previous 1α (1-alpha) and 1β (1-beta) DRAM node leadership to deliver innovations that will power future computing platforms from the cloud to industrial and consumer applications to Edge AI devices like AI PCs, smartphones and automobiles. The Micron 1γ DRAM node will first be leveraged in its 16 Gb DDR5 DRAM and over time will be integrated across Micron's memory portfolio to meet the industry's accelerating demand for high-performance, energy-efficient memory solutions for AI. Designed to offer speed capabilities of up to 9200 MT/s, the 16 Gb DDR5 product provides up to a 15% speed increase and over 20% power reduction compared to its [website] the introduction of AI across the data center and the edge, the demand for memory has never been greater. Micron's transition to the 1γ DRAM node helps address the key challenges customers are looking to resolve:"Micron's expertise in developing proprietary DRAM technologies, combined with our strategic use of EUV lithography, has resulted in a robust portfolio of cutting-edge 1γ-based memory products poised to propel the AI ecosystem forward," stated Scott DeBoer, executive vice president and chief technology & products officer at Micron. "The enhanced bit density output of the 1γ DRAM node underscores Micron's manufacturing prowess and efficiency, enabling us to scale memory supply to meet the growing industry demand."Micron's proven DRAM technology and manufacturing strategy over multiple generations has enabled the creation of this optimized 1γ node. The 1γ DRAM node innovation is supported by CMOS advancements, including next-generation high-K metal gate technology that improves the transistor performance for better speed capability, design optimization and feature size shrink, all of which unlock the benefits of power savings and performance scaling. Additionally, by optimally incorporating leading edge EUV lithography, along with advanced high aspect ratio etch technology and industry leading design innovations, the 1γ node delivers industry-leading bit density advantages. By developing the 1γ node for manufacturing across global sites, Micron is helping to ensure better technology and supply resiliency for the industry."Micron has once again led the industry in introducing the world's most advanced memory technology. Micron's 1γ DRAM node is a groundbreaking achievement with its unmatched power efficiency and extraordinary performance," said Sumit Sadana, executive vice president and chief business officer of Micron Technology. "Micron 1γ DRAM products are set to revolutionize the AI ecosystem by delivering scalable memory solutions across all segments, from data centers to the edge, enabling our customers to stay ahead of the rapidly evolving industry demands."Transforming products from cloud to edgeServing as the foundation for future products, the 1γ node will be integrated across the Micron memory portfolio:"We are excited to see Micron's progress with their 1γ DRAM node and we have already begun validation efforts for Micron 1γ DDR5 memory," said Amit Goel, Corporate Vice President, Server Platform Solutions Engineering, AMD. "Our close collaboration is crucial as we continue to advance the compute ecosystem with next-generation AMD EPYC products for the data center as well as consumer processors across our portfolio.""Micron's 1γ node advancements bring solid power and density improvements to Intel servers and AI PCs. We are excited to see Micron's continued innovation in DRAM technology and look forward to augmenting server system performance and PC battery life based on these capacities," said Dr. Dimitrios Ziakas, vice president and general manager of Memory & IO Technologies at Intel Corporation. "Intel is working diligently through its rigorous server validation process for Micron's 1γ DDR5 memory samples, to deliver server systems with the highest quality and best-in-class experiences for our customers."Qualified customers and partners may take part in the Micron Technology Enablement Program (TEP) for DDR5, which offers early access to technical information and to electrical and thermal models, as well as support to aid in the design, development and introduction of next-generation computing platforms.

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